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This add-on to Veeam Backup & Replication provides one-click site recovery orchestration as well as DR testing and documentation for your backups. Product Overview … This add-on to Veeam Backup & Replication provides one-click site recovery orchestration and DR testing and documentation for your backups. Product Overview Veeam Backup & Replication is an enterprise backup and replication solution that delivers high availability, security, efficiency, and backup efficiency while remaining integrated with Veeam Software.
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2015/12/09 – Veeam, the leader in Availability for VMware • Veeam Backup & Replication 9.5.x is a free. Veeam Backup & Replication Enterprise Keygen Torrents.. Backup & Replication Key and Serial.This invention relates to the field of semiconductor fabrication, and more particularly to a system for preparing a substrate to be processed in a single standard chamber.
As the circuitry density of semiconductor devices continues to increase, the size and number of contacts and vias connecting these devices to adjacent circuit elements continue to decrease. In order to connect a semiconductor device to other circuit elements, contacts and vias are generally formed in insulating layers. These contacts and vias are subsequently filled with a metal. Conductive metal contacts and vias are formed by etching a contact or via opening through the insulating layers and filling the openings with a conductive metal, such as tungsten. Small, deep, high aspect ratio vias, in particular, are difficult to etch and fill.
The inventive method prepares a semiconductor device and/or its substrate to be processed in a standard, single process chamber. In a preferred implementation, the method prepares a semiconductor device substrate for processing in a standard, single chamber to produce a conductive, interconnect structure.
The method includes the step of forming at least one deep, high aspect ratio trench in a portion of the substrate that is not masked. The shallow trenches are formed in separate and adjacent steps of etching. After forming the shallow trenches, the substrate is transferred to a separate, standard chamber and a masking step is performed. Masking is performed using a high selectivity etch. After the masking step, the substrate is transferred to a second standard chamber and a vertical etch is performed to extend the shallow trench deep into the substrate. The shallow trenches are then filled using a standard etch. The substrate is then transferred to a standard chamber where the shallow trench is etched into a substrate layer that has been masked.
A second embodiment of the method prepares a substrate for semic
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