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New Features + Pricing. License Plate Image Editor + Serial Number Maker.1. Field of the Invention
The present invention relates to a micro-electromechanical system (MEMS) gyroscope and a method for manufacturing a semiconductor substrate therefor, and in particular, to a vacuum packaged semiconductor substrate structure for mass producing high-quality, high-performance MEMS gyroscopes that can be integrated with semiconductor devices and a method for manufacturing such a vacuum packaged semiconductor substrate structure.
2. Description of the Related Art
Recently, considerable interest has been directed to MEMS gyroscopes as next-generation inertial sensors. A MEMS gyroscope is manufactured by etching a silicon substrate using silicon etching solutions. However, this method has the problem of excess etching of the silicon substrate. For example, a solution of TMAH has a high etching rate of a silicon substrate of 400 μm thick and is used to etch a silicon substrate of 300 μm thick.
This problem can be improved if the silicon substrate is thinned to about 150 μm. As the thickness of the substrate decreases to 150 μm, the etching rate of the substrate increases. In addition, other problems result from the thinning of the substrate. For example, a difference in coefficient of thermal expansion between the silicon substrate and a silicon oxide layer formed thereon causes defects to occur in the silicon substrate, thereby decreasing the quality of the thinned silicon substrate. Also, impurities in the silicon substrate etched to form the silicon substrate may leach out after a short time, thus contaminating the thinned silicon substrate. The thinning of the silicon substrate also has the problem of decreased mechanical strength of the substrate.
As described above, it is very difficult to manufacture a silicon substrate that is thinner than 150 μm, while maintaining the mechanical strength of the substrate. Thus, a thin-film or thick-film silicon substrate that is about 150 μm thick has been widely used in the MEMS gyroscope industry.
Generally, the thickness of a thin-film silicon substrate is about 150 μm and the mechanical strength of the substrate is about 10 MPa. When the thickness of the substrate is increased to about 500 μm to improve the mechanical strength of the substrate, the thickness of the substrate may be increased to as much as 1 to 2 mm. However, this

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